* VDS =85V,ID =80A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current .

General Features
* VDS =85V,ID =80A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:6.8mΩ)
* High density cell design for ult.

The NCE8580D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. General Features
* VDS =85V,ID =80A RDS(ON) < 8.5.

NCE8580

NCE85H15

NCE85H15T

NCE85H21

NCE85H21C

NCE85H21T

NCE85H21TC

NCE85H35TC

NCE8010S

NCE8050

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